BC637

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 100 MHz
Maximum DC Collector Current : 1 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40


Features:

* High current (max. 1 A)
* Low voltage (max. 80 V).




Application

* Driver stages of audio/video amplifiers.




Pinout






Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage BC635 BC637 BC639	open emitter	- - -	45 60 100	V V V
VCEO	collector-emitter voltage BC635 BC637 BC639	open base	- - -	45 60 80	V V V
VEBO	emitter-base voltage	open collector	-	5	V
IC	collector current (DC)		-	1	A
ICM	peak collector current		-	1.5	A
IBM	peak base current		-	200	mA
Ptot	total power dissipation	Tamb 25 °C	-	0.83	W
Tstg	storage temperature		-65	+150
Tj	junction temperature		-	150
Tamb	operating ambient temperature		-65	+150

Description

The BC637 features are as folllows:

*NPN transistor in a TO-92; SOT54 plastic package.
*PNP complements: BC636, BC638 and BC640.

Parameters:

Technical/Catalog Information	BC637
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	1A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BC637 BC637 BC637OS ND BC637OSND BC637OS