BC63916

Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 100 MHz
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 1 A
Packaging : Bulk


Specifications

Symbol	Parameter	Value	Units
VCER	Collector-Emitter Voltage at RBE =1K	100	V
VCES	Collector-Emitter Voltage	100	V
VCEO	Collector-Emitter Voltage	80	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current	1	A
PC	Collector Power Dissipation	1	W
TJ , TSTG	Operating and Storage Junction Temperature Range	-55 ~ 150

* PW=5ms, Duty Cycle=10%


Parameters:

Technical/Catalog Information	BC63916
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	1A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC63916 BC63916