Features: * High current (500 mA)* 600 mW total power dissipation* Replaces two SOT23 packaged transistors on same PCB area.Application* General purpose switching and amplification.* Complementary driver.* Half and full bridge driver.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. M...
BC817DPN: Features: * High current (500 mA)* 600 mW total power dissipation* Replaces two SOT23 packaged transistors on same PCB area.Application* General purpose switching and amplification.* Complementary d...
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| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| Per transistor; for the PNP transistor with negative polarity | |||||
| VCBO | collector-base voltage | open emitter | - | 50 | V |
| VCEO | collector-emitter voltage | open base | - | 45 | V |
| VEBO | emitter-base voltage | open collector | - | 5 | V |
| IC | collector current (DC) | - | 500 | mA | |
| ICM | peak collector current | - | 1 | A | |
| IBM | peak base current | - | 200 | mA | |
| Ptot | total power dissipation | Tamb 25 °C;note 1 | - | 370 | mW |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 150 | ||
| Tamb | operating ambient temperature | -65 | +150 | ||
| Per device | |||||
| Ptot | total power dissipation | Tamb 25 °C; note 1 | - | 600 | mW |