BC849C

The BC849C is a type of general purpose transistor.There are some maximum ratings about it. (1): collector-emitter voltage(VCEO) is 30 Vdc; (2): collector-base voltage(VCBO) is 30 Vdc; (3): emitter-base voltage(VEBO) is 5.0 Vdc; (4): collector current-continuous(Ic) is 100 mAdc.

At the same time, there are also some information about the thermal characteristics of BC849C. (1): total device dissipation FR-5 board (PD) is 225 mW when Ta is 25; (2): thermal resistance junction to ambient(RJA) is 556/W; (3): total device dissipation alumina substrate(PD) is 300 mW when Ta is 25; (4): thermal resistance junction to ambient(RJA) is 417/W; (5): junction and storage temperature(Tj, Tstg) is -55 to +150.

At last,there are still some electrical characteristics about BC849C when Ta is 25 unless otherwise noted.Off characteristics: (1): collector-emitter breakdown voltage(V(BR)CEO) is 30 Vdc min when Ic is 10 mA; (2): collector-emitter breakdown voltage(V(BR)CES) is 30 Vdc min when Ic is 10 uA and VEB is 0; (3): collector-base breakdown voltage(V(BR)CBO) is 30 Vdc min when Ic is 10 uA; (4): emitter-base breakdown voltage(V(BR)EBO) is 5.0 Vdc min when IE is 1.0 uA; (5): collector cutoff current(ICBO) is 15 nAdc max when VCB is 30 V.