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Part Number: BC857BF
Description: PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package.NPN complemen...
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BC857BF
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DataSheet
General Description
BC857BF General Description
PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package.
NPN complements: BC846F, BC847F and BC848F series.
BC857BF Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| ICBO | collector cut-off current | IE = 0; VCB = −30 V | − | −15 | nA |
| IE = 0; VCB = −30 V; Tj = 150 °C | − | −5 | nA | ||
| IEBO | emitter cut-off current | IC = 0; VEB = −5V | − | −100 | nA |
| hFE | DC current gain BC856AF; BC857AF; BC858AF BC856BF; BC857BF; BC858BF BC857CF; BC858CF |
IC = −2 mA; VCE = −5V | 125 220 420 |
250 475 800 |
|
| VCEsat | collector-emitter saturation voltage | IC = −10 mA; IB = −0.5 mA | − | −200 | mV |
| IC = −100 mA; IB = −5 mA; note 1 | − | −400 | mV | ||
| VBE | base-emitter voltage | IC = −2 mA; VCE = −5V | −600 | −750 | mV |
| IC = −10 mA; VCE = −5V | − | −820 | mV | ||
| Cc | collector capacitance | IE =ie = 0; VCB = −10 V; f = 1 MHz | − | 2.5 | pF |
| fT | transition frequency | IC = −10 mA; VCE = −5 V; f = 100 MHz | 100 | − | MHz |
| F | noise figure | IC = −200 µA; VCE = −5 V; RS =2kΩ; f = 1 kHz; B = 220 Hz | − | 10 | dB |
1. Pulse test: tp 300 µs; 0.02.
BC857BF Features
• Power dissipation comparable to SOT23
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
BC857BF Typical Application
• General purpose switching and amplification especially in portable equipment.
BC857BF
PDF/DataSheet Download
- Datasheet: BC857BF
- File Size: 41780 KB
- Manufacturer: PHILIPS [Philips Semiconductors]
- Click here to Download
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