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BD1406S

Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

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SeekIC No. : 00211262 Detail

BD1406S: Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

BD1406S Data Sheet

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Part Number:
BD1406S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 1.5 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-126 Packaging : Bulk    

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 1.5 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-126


Parameters:

Technical/Catalog InformationBD1406S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)1.5A
Power - Max1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BD1406S
BD1406S



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