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BD159

Transistors Bipolar (BJT) 0.5A 350V 20W NPN

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SeekIC No. : 00215063 Detail

BD159: Transistors Bipolar (BJT) 0.5A 350V 20W NPN

BD159 Data Sheet

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Part Number:
BD159
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 350 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 30 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-225 Packaging : Bulk    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 30
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 350 V
Package / Case : TO-225


Specifications

Symbol Parameter
Value
Units
VCBO Collector-Base Voltage : BD157
275
V
: BD158
325
V
: BD159
375
V
VCEO Collector-Emitter Voltage : BD157
250
V
: BD158
300
V
: BD159
350
V
VEBO Emitter-Base Voltage
5
V
IC Collector Current (DC)
0.5
A
ICP *Collector Current (Pulse)
1.0
A
IB Base Current
0.25
A
PC Collector Dissipation (TC =25)
20
W
TJ Junction Temperature
50
TSTG Storage Temperature
- 65 ~ 150



Parameters:

Technical/Catalog InformationBD159
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)350V
Current - Collector (Ic) (Max)500mA
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Vce Saturation (Max) @ Ib, Ic-
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-225-3
PackagingBulk
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BD159
BD159



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