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BD159G

Transistors Bipolar (BJT) 0.5A 350V 20W NPN

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BD159G: Transistors Bipolar (BJT) 0.5A 350V 20W NPN

BD159G Data Sheet

floor Price/Ceiling Price

US $ .19~.35 / Piece | Get Latest Price
Part Number:
BD159G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.35
  • $.31
  • $.22
  • $.19
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 350 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 30 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-225 Packaging : Bulk    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 30
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 350 V
Package / Case : TO-225


Parameters:

Technical/Catalog InformationBD159G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)350V
Current - Collector (Ic) (Max)500mA
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Vce Saturation (Max) @ Ib, Ic-
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-225-3
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BD159G
BD159G



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