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BD179G

Transistors Bipolar (BJT) 3A 80V 30W NPN

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SeekIC No. : 00203986 Detail

BD179G: Transistors Bipolar (BJT) 3A 80V 30W NPN

BD179G Data Sheet

floor Price/Ceiling Price

US $ .2~.34 / Piece | Get Latest Price
Part Number:
BD179G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.34
  • $.31
  • $.25
  • $.2
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 63 Configuration : Single
Maximum Operating Frequency : 3 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-225
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 3 A
Collector- Emitter Voltage VCEO Max : 80 V
Packaging : Bulk
Maximum Operating Frequency : 3 MHz (Min)
Package / Case : TO-225
DC Collector/Base Gain hfe Min : 63


Parameters:

Technical/Catalog InformationBD179G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)3A
Power - Max30W
DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic800mV @ 100mA, 1A
Frequency - Transition3MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-225-3
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BD179G
BD179G



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