BD237

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 3 MHz
DC Collector/Base Gain hfe Min : 40
Maximum DC Collector Current : 2 A
Package / Case : SOT-32


Application

* Complement to BD 234/236/238 respectively




Specifications

Symbol	Parameter		Value	Units
VCBO	Collector-Base Voltage	: BD233	45	V
		: BD235	60	V
		: BD237	100	V
VCEO	Collector-Emitter Voltage	: BD233	45	V
		: BD235	60	V
		: BD237	80	V
VCER	V Collector-Emitter Voltage	: BD233	45	V
		: BD235	60	V
		: BD237	100	V
VEBO	Emitter-Base Voltage		5	V
IC	Collector Current (DC)		2	A
ICP	*Collector Current (Pulse)		6	A
PC	Collector Dissipation (TC =25)		25	W
TJ	Junction Temperature		150
TSTG	Storage Temperature		- 65 ~ 150

Parameters:

Technical/Catalog Information	BD237
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	2A
Power - Max	25W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 1A, 2V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	SOT-32-3, TO-126-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BD237 BD237 497 7167 5 ND 49771675ND 497-7167-5