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BD250

Transistors Bipolar (BJT) 120W PNP Silicon

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SeekIC No. : 00213815 Detail

BD250: Transistors Bipolar (BJT) 120W PNP Silicon

BD250 Data Sheet

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Part Number:
BD250
Mfg:
Bourns
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 45 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 25 A
DC Collector/Base Gain hfe Min : 25 Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-93    

Description

Configuration :
Maximum Operating Frequency :
Packaging :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
DC Collector/Base Gain hfe Min : 25
Collector- Emitter Voltage VCEO Max : 45 V
Maximum DC Collector Current : 25 A
Package / Case : SOT-93


Specifications

SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
BD246

Open emitter
-55
V
BD246A
-70
BD246B
-90
BD246C
-115
VCEO
 Collector-emitter voltage
BD246

Open base
-45
V
BD246A
-60
BD246B
-80
BD246C
-100
VEBO
 Emitter-base voltage
Open collector
-5
V
IC
 Collector current
-25
A
ICM
 Collector current-peak
-40
A
IB
 Base current
-5
A
PC
 Total power dissipation
TC =25
125
W
Tj
 Junction temperature
-65~150
Tstg
 Storage temperature
-65~150





Description

The BD250 features are as follows:

·With TO-3PN package
·Complement to type BD249/A/B/C
·125 W at 25!aC case temperature
·25 A continuous collector current




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