BD535J

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00212331 Detail

BD535J: Transistors Bipolar (BJT) NPN Epitaxial Sil

floor Price/Ceiling Price

Part Number:
BD535J
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 20 Configuration : Single
Maximum Operating Frequency : 12 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 20
Packaging : Bulk
Package / Case : TO-220
Maximum Operating Frequency : 12 MHz


Parameters:

Technical/Catalog InformationBD535J
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)8A
Power - Max50W
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 2A, 2V
Vce Saturation (Max) @ Ib, Ic800mV @ 200mA, 2A
Frequency - Transition3MHz
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BD535J
BD535J



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