BD652

Power Dissipation :
Packaging :
Transistor Polarity : PNP
Mounting Style : Through Hole
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Collector Cut-off Current : 200 uA
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 120 V
Package / Case : TO-220
Maximum DC Collector Current : 8 A
Collector- Base Voltage VCBO : 140 V


Application

·Designed for use as complementary AF push-pull output stage applications




Specifications

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	-140	V
VCEO	Collector-Emitter Voltage	-120	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current-Continuous	-8	A
ICP	Collector Current-Peak	-12	A
IB	Base Current-Continuous	-0.3	A
PC	Collector Power Dissipation @TC=25	2	W
	Collector Power Dissipation @TC=25	62.5
Tj	Junction Temperature	150
Tstg	Storage Temperature Range	-65~150

Description

The BD652 features are as follows:

·Collector-Emitter Breakdown Voltage- : V_(BR)CEO= -120V(Min)
·High DC Current Gain : h_FE= 750(Min) @I_C= -3A
·Low Saturation Voltage
·Complement to Type BD651