BD810

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 30
Maximum DC Collector Current : 10 A
Maximum Operating Frequency : 1.5 MHz (Min)


Application

* DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
* BD 808, 810 are complementary with BD 807, 890




Specifications

Rating	Symbol	Type	Value	Units
CollectorEmitter Voltage	VCEO	BD808 BD810	60 80	Vdc
CollectorBase Voltage	VCBO	BD808 BD810	70 80	Vdc
Emitter-Base Voltage	VEBO		5.0	Vdc
Collector Current	IC		10	Adc
Base Current	IB		6.0	Adc
Total Device Dissipation @ T = 25 CDerate above 25	PD		90 720	Watt mW/
Operating and Storage Junction Temperarture Range	TJ:TSTG		55 to +150

Parameters:

Technical/Catalog Information	BD810
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	10A
Power - Max	90W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 2A, 2V
Vce Saturation (Max) @ Ib, Ic	1.1V @ 300mA, 3A
Frequency - Transition	10.5MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BD810 BD810