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BD810G

Transistors Bipolar (BJT) 10A 80V 90W PNP

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BD810G: Transistors Bipolar (BJT) 10A 80V 90W PNP

BD810G Data Sheet

floor Price/Ceiling Price

US $ .32~.65 / Piece | Get Latest Price
Part Number:
BD810G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.65
  • $.54
  • $.45
  • $.32
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 10 A
DC Collector/Base Gain hfe Min : 30 Configuration : Single
Maximum Operating Frequency : 1.5 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 30
Maximum DC Collector Current : 10 A
Maximum Operating Frequency : 1.5 MHz (Min)


Parameters:

Technical/Catalog InformationBD810G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)10A
Power - Max90W
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 2A, 2V
Vce Saturation (Max) @ Ib, Ic1.1V @ 300mA, 3A
Frequency - Transition10.5MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BD810G
BD810G



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