BD910

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 15 A
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-220
Maximum Operating Frequency : 3 MHz (Min)


Application

·With TO-220C package
·Complement to type BD909 BD911




Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	BD910 BD912	Open emitter	-80 -100	V
VCEO	Collector-emitter voltage	BD910 BD912	Open base	-80 -100	V
VEBO	Emitter-base voltage		Open collector	-5	V
IC	Collector current			-15	A
IB	Base current			-5	A
PC	Collector power dissipation		TC25	90	W
Tj	Junction temperature			150
Tstg	Storage temperature			-65~150

Description

The BD910 features are as follows:

·With TO-220C package
·Complement to type BD909 BD911