BD912

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 15 A
DC Collector/Base Gain hfe Min : 15
Maximum Operating Frequency : 3 MHz


Application

·With TO-220C package
·Complement to type BD909 BD911




Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	BD910 BD912	Open emitter	-80 -100	V
VCEO	Collector-emitter voltage	BD910 BD912	Open base	-80 -100	V
VEBO	Emitter-base voltage		Open collector	-5	V
IC	Collector current			-15	A
IB	Base current			-5	A
PC	Collector power dissipation		TC25	90	W
Tj	Junction temperature			150
Tstg	Storage temperature			-65~150

Description

The BD912 features are as follows:

·With TO-220C package
·Complement to type BD909 BD911

Parameters:

Technical/Catalog Information	BD912
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	15A
Power - Max	90W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 5A, 4V
Vce Saturation (Max) @ Ib, Ic	1V @ 500mA, 5A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BD912 BD912 497 7179 5 ND 49771795ND 497-7179-5