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BDP32

Features: * High current (max. 3 A)* Low voltage (max. 45 V).Application* General purpose medium power applications.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - -45 V VCEO collector-emitter voltage open base - -...

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BDP32: Features: * High current (max. 3 A)* Low voltage (max. 45 V).Application* General purpose medium power applications.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO ...

BDP32 Data Sheet

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Part Number:
BDP32
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

* High current (max. 3 A)
* Low voltage (max. 45 V).


Application

* General purpose medium power applications.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -45 V
VCEO collector-emitter voltage open base - -45 V
VEBO emitter-base voltage open collector - -5 V
IC collector current (DC)   - -3 mA
ICM peak collector current   - -6 A
IBM peak base current   - -0.5 A
Ptot total power dissipation Tamb 25 °C; note 1 - 1.35 W
Tstg storage temperature   -65 +150
Tj junction temperature   - 150
Tamb operating ambient temperature   -65 +150



Description

PNP medium power transistor BDP32 in a SOT223 plastic package. NPN complement: BDP31.


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