Purchase BDS10IG, In-stock BDS10IG From SeekIC.
- Table of contents:
BDS10IG
-
Suppliers
DataSheet
General Description
BDS10IG Maximum Ratings
|
BDS10 |
BDS11 |
BDS12 | ||
| VCBO | Collector - Base voltage (IE = 0) |
60V |
80V |
100V |
| VCEO | Collector - Emitter voltage (IB = 0) |
60V |
80V |
100V |
| VEBO | Emitter - Base voltage (IC = 0) |
5V | ||
| IE,IC |
Emitter , Collector current |
15A | ||
| IB | Base current |
5A | ||
| Ptot | Total power dissipation at Tcase 75°C |
90W | ||
| Tstg | Storage Temperature |
65 to 200°C | ||
| Tj | Junction Temperature |
200°C | ||
BDS10IG Features
* HERMETIC TO257 ISOLATED METAL PACKAGES
* HIGH RELIABILITY
* MILITARY AND SPACE OPTIONS
* SCREENING TO CECC LEVELS
* ALSO AVAILABLE IN TO220 METAL AND TO220 CERAMIC SURFACE MOUNT PACKAGES
* HIGH RELIABILITY
* MILITARY AND SPACE OPTIONS
* SCREENING TO CECC LEVELS
* ALSO AVAILABLE IN TO220 METAL AND TO220 CERAMIC SURFACE MOUNT PACKAGES
BDS10IG Typical Application
* POWER LINEAR AND SWITCHING APPLICATIONS
* GENERAL PURPOSE POWER
* GENERAL PURPOSE POWER
BDS10IG
PDF/DataSheet Download
- Datasheet: BDS10IG
- File Size: 15159 KB
- Manufacturer: SEME-LAB [Seme LAB]
- Click here to Download
- ·BDS10
- SEME-LAB [Seme LAB]
- SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
- 20883 KB
- ·BDS10SMD
- SEME-LAB [Seme LAB]
- SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
- 20883 KB
- ·BDS11
- SEME-LAB [Seme LAB]
- SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
- 20883 KB
- ·BDS11IG
- SEME-LAB [Seme LAB]
- SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE
- 15159 KB
- ·BDS11SMD
- SEME-LAB [Seme LAB]
- SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
- 20883 KB
- ·BDS12
- SEME-LAB [Seme LAB]
- SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
- 20883 KB
- ·BDS12IG
- SEME-LAB [Seme LAB]
- SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE
- 15159 KB
- ·BDS12SMD
- SEME-LAB [Seme LAB]
- SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
- 20883 KB
BDS10IG Relative Products
BDS10
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BDP956
BDP955
Features of the BDP955 are:(1)for AF driver and output stages;(2)high collector current;(3)high current gain;(4)low collector-emitter saturation voltage;(5)complementary types: BDP952 to BDP956 (PNP). The absolute maximum ratings of the BDP955 can be summar...
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