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MFG:ST  Package Cooled:TO-220  D/C:05+  

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Part Number: BDX53BFP

 

MFG: ST

Package Cooled: TO-220

D/C: 05+

Description: The BDX53BFP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration a...


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BDX53BFP General Description


The BDX53BFP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration and are mounted in T0-220FP fully molded isolated package. It is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications.

BDX53BFP Maximum Ratings

Symbol
Parameter
Value
Unit
VCBO
 Collector-Base Voltage (IE= 0))
80
V
VCEO
 emitter-base voltage(IB = 0)
80
V
VEBO
 Emitter-Base Voltage (IC = 0)
5
V
IC
 Collector and Emit ter Current
8
A
ICM
 Collector Peak Current (repetitive)
12
A
IB
 Base Current
0.2
A
Ptot
 Total Dissipation at TC = 25 °C
29
W
Tstg
 Storage Temperature
-65 to 150
°C
Tj
 Max. Operating Junction Temperature
150
°C

BDX53BFP Typical Application

·GENERAL PURPOSE SWITCHING AND AMPLIFIER
· LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
· FULLY MOLDED ISOLATED PACKAGE
· 2000 V DC ISOLATION(U.L. COMPLIANT)

BDX53BFP datasheet

BDX53BFP
PDF/DataSheet Download

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Related Part Number

BDX53BFP Relative Products

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