- Part Number:
BF485PN
- Category：
- --
- Vendor：
- PHILIPS
- Package Cooled：
- SOT23
- D/C：
- 00+
- Description：
NPN/PNP transistors in a SOT457 (SC-74) plastic package.
- Price Break
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- Unit Price
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- Extended Price
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(All prices are in USD) Prices for reference only
General Description
NPN/PNP transistors in a SOT457 (SC-74) plastic package.
Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| Per transistor; for the PNP transistor with negative polarity | |||||
| VCBO | collector-base voltage | open emitter | − | 350 | V |
| VCEO | collector-emitter voltage | open base | − | 350 | V |
| VEBO | emitter-base voltage | open collector | − | 6 | V |
| IO | output current (DC) | − | 100 | mA | |
| ICM | peak collector current | − | 200 | mA | |
| Ptot | total power dissipation | Tamb ≤ 25 °C; note 1 | − | 600 | mW |
| Tstg | storage temperature | −65 | +150 | °C | |
| Tj | junction temperature | − | 150 | °C | |
| Tamb | operating ambient temperature range | −65 | +150 | °C | |
| Per device | |||||
| Ptot | total power dissipation | Tamb ≤ 25 °C; note 1 | − | 300 | mW |
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
Features
• High voltage (max. 350 V)
• Low current (max. 200 mA)
• High power dissipation (600 mW)
• Two independently working transistors.
