Purchase BF493S, In-stock BF493S From SeekIC.
MFG:MC Package Cooled:1000 D/C:92
- Table of contents:
BF493S
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Suppliers
DataSheet
General Description
BF493S Maximum Ratings
| Rating | Symbol | Value | Unit |
| CollectorEmitter Voltage | VCEO | 350 | Vdc |
| CollectorBase Voltage | VCBO | 350 | Vdc |
| EmitterBase Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 500 | mAdc |
| Total Device Dissipation @ TA = 25 Derate above 25°C |
PD | 625 5.0 |
Watts mW/°C |
| Total Device Dissipation @ TC = 25Derate above 25°C | PD | 1.5 12 |
Watts mW/ |
| Operating and Storage Junction Temperature Range |
TJ, Tstg | 55 to +150 |
BF493S Connection Diagram
BF493S
PDF/DataSheet Download
- Datasheet: BF493S
- File Size: 82999 KB
- Manufacturer: ONSEMI [ON Semiconductor]
- Click here to Download
- ·BF40931
- ETC [ETC]
- SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP
- 436395 KB
- ·BF410
- SIEMENS [Siemens Semiconductor Group]
- LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS
- 56306 KB
- ·BF410A
- SIEMENS [Siemens Semiconductor Group]
- LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS
- 56306 KB
- ·BF410B
- SIEMENS [Siemens Semiconductor Group]
- LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS
- 56306 KB
- ·BF410C
- SIEMENS [Siemens Semiconductor Group]
- LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS
- 56306 KB
- ·BF410D
- SIEMENS [Siemens Semiconductor Group]
- LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS
- 56306 KB
- ·BF414
- SIEMENS [Siemens Semiconductor Group]
- NPN Silicon RF Transistor (For low-noise, common base VHF and FM stages)
- 13821 KB
- ·BF419
- PHILIPS [Philips Semiconductors]
- NPN high-voltage transistor
- 66963 KB
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