BF493S

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-92
Maximum DC Collector Current : 0.5 A
Maximum Operating Frequency : 50 MHz (Min)
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 350 V
DC Collector/Base Gain hfe Min : 25 at 1 mA at 10 V


Pinout




Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	VCEO	350	Vdc
CollectorBase Voltage	VCBO	350	Vdc
EmitterBase Voltage	VEBO	6.0	Vdc
Collector Current - Continuous	IC	500	mAdc
Total Device Dissipation @ TA = 25 Derate above 25°C	PD	625 5.0	Watts mW/°C
Total Device Dissipation @ TC = 25Derate above 25°C	PD	1.5 12	Watts mW/
Operating and Storage Junction Temperature Range	TJ, Tstg	55 to +150

Parameters:

Technical/Catalog Information	BF493S
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	350V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 1mA, 10V
Vce Saturation (Max) @ Ib, Ic	2V @ 2mA, 20mA
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	10nA
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BF493S BF493S