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Part Number: BF820W

 

 

 

 

Description: NPN high-voltage transistor in a SOT323 plastic package.


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BF820W General Description


NPN high-voltage transistor in a SOT323 plastic package.

BF820W Maximum Ratings

SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage open emitter
  BF820W  
-
300
V
  BF822W  
-
250
V
VCEO collector-emitter voltage open base
  BF820W  
-
300
V
  BF822W  
-
250
V
VEBO emitter-base voltage open collector
-
5
V
IC collector current (DC)  
-
50
mA
ICM peak collector current  
-
100
mA
IBM peak base current  
-
50
mA
Ptot total power dissipation Tamb 75°C; note 1
-
200
W
Tstg storage temperature  
-65
+150
°C
Tj junction temperature  
-
150
°C
Tamb operating ambient temperature  
-65
+150
°C

BF820W Features

· Low current (max. 50 mA)
· High voltage (max. 300 V).

BF820W Typical Application

· Telephony and professional communication equipment.

BF820W Connection Diagram

BF820W  Connection Diagram

BF820W datasheet

BF820W
PDF/DataSheet Download

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