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BF904WR

Features: · Specially designed for use at 5 V supply voltage· Short channel transistor with high forward transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 GHz· Superior cross-modulation performance during AGC.ApplicationVHF and UHF applications with 3 to 7...

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SeekIC No. : 004299579 Detail

BF904WR: Features: · Specially designed for use at 5 V supply voltage· Short channel transistor with high forward transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 G...

BF904WR Data Sheet

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Part Number:
BF904WR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

· Specially designed for use at 5 V supply voltage
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz
· Superior cross-modulation performance during AGC.




Application

VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.




Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
 CONDITIONS MIN.
TYP.
MAX.
UNIT
VDS drain-source voltage   - - 7 V
ID drain current   - - 30 mA
Ptot total power dissipation   - - 280 mW
Tj junction temperature   - - 150 °C
|Yfs| transfer admittance   22 28 30 mS
Cig1-s input capacitance at gate 1   - 2.35 2.6 pF
Crs feedback capacitance f = 1 MHz - 25 35 fF
F noise figure at 800 MHz f = 800 MHz - 1.7 - dB



Description

Enhancement type field-effect transistor BF904WR in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.




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