BF909 Selling Leads, Price trend, BF909 DataSheet download, circuit diagram from SeekIC.com

Features: · Specially designed for use at 5 V supply voltage· High forward transfer admittance· Short channel transistor with high forward transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 GHz· Superior cross-modulation performance during AGC.Application· ...

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SeekIC No. : 004299583 Detail

BF909: Features: · Specially designed for use at 5 V supply voltage· High forward transfer admittance· Short channel transistor with high forward transfer admittance to input capacitance ratio· Low noise g...

BF909 Data Sheet

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Part Number:: BF909
Supply Ability:: 5000

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Qty
1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/5/1

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US $.21 - .32 / Piece

Transistors RF MOSFET Small Signal TAPE7 MOS-RFSS

Product Details

Description

Features:

· Specially designed for use at 5 V supply voltage
· High forward transfer admittance
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz
· Superior cross-modulation performance during AGC.

Application

· VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
V_DS	drain-source voltage		-	-	7	V
I_D	drain current		-	-	40	mA
P_tot	total power dissipation		-	-	200	mW
T_j	operating junction temperature		-	-	150	°C
y_fs	forward transfer admittance		36	43	50	mS
C_ig1-s	input capacitance at gate 1		-	3.6	4.3	pF
C_rs	reverse transfer capacitance	f = 1 MHz	-	35	50	pF
F	noise figure	f = 800 MHz	-	2	2.8	dB

Description

Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

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BF909

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