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Five Points

Parameter	Symbol	Value	Unit
Collector-base voltage	V_CBO	20	Vdc
Collector-emitter voltage	V_CEO	30	Vdc
Emitter-base voltage	V_EBO	3.0	Vdc
Collector Current - Continuous	I_C	100	mAdc
Total Device Dissipation @ T_A= 25°C Derate above 25°C	P_D	625	mW
Total Device Dissipation @ T_A= 25°C Derate above 25°C	P_D	5.0	mW/°C
Total Device Dissipation @ T_C = 25°C Derate above 25°C	P_D	1.5	Watt
Total Device Dissipation @ T_C = 25°C Derate above 25°C	P_D	1.2	mW/°C
Operating and Storage Junction Temperature Range	T_J,T_stg	55 to +150

BF901
PDF/DataSheet Download

BF959
TRANS RF NPN 20V 100MA TO-92
BF909WR,115
MOSFET N-CH 7V 40MA SOT343R
BF909WR
Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconBF909WR nected and an internal bias circuit to ensure good cross-modulation performance du...
BF909R
Enhancement type field-effect transistor BF909R in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation perfo...
BF909AWR,115
MOSFET N-CH 7V 40MA SOT143R
BF909,215
MOSFET N-CH 7V 40MA SOT143B

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