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BF990A

Features: · Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.Application` RF applications such as: Television tuners with 12 V supply voltage Professional communication equipment.PinoutSpecifications SYMBOL PARAMETER CONDITIONS ...

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BF990A: Features: · Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.Application` RF applications such as: Television tuners with 12 V supply volta...

BF990A Data Sheet

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Part Number:
BF990A
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.




Application

` RF applications such as:
Television tuners with 12 V supply voltage
Professional communication equipment.


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
 CONDITIONS
TYP.
MAX.
UNIT
VDS drain-source voltage - 18 V
ID drain current - 30 mA
Ptot total power dissipation up to Tamb = 60 °C - 200 mW
Tj junction temperature - 150 °C
|Yfs| transfer admittance f = 1 kHz; ID = 7 mA; VDS = 10 V; VG2-S = 4 V 19 - mS
Cig1-s input capacitance at gate 1 f = 1 MHz; ID = 7 mA; VDS = 10 V; VG2-S = 4 V 2.6 3 pF
Crs feedback capacitance f = 1 MHz; ID = 7 mA; VDS = 10 V; VG2-S = 4 V 25 - fF
F noise figure at 800 MHz f = 800 MHz; GS = 2 mS; BS = BSopt; ID = 7 mA;
VDS = 10 V; VG2-S = 4 V		 2 3 dB



Description

Depletion type field-effect transistor BF990A in a plastic SOT143 microminiature package with interconnected source and substrate.




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