Features: · Small size· High power gain at low bias current and voltage· Temperature matched· Balanced configuration· hFE matched· Continues to operate at VCE < 1 V.Application· Single balanced mixers· Balanced amplifiers· Balanced oscillators.PinoutSpecifications SYMBOL PARAMETER COND...
BFE505: Features: · Small size· High power gain at low bias current and voltage· Temperature matched· Balanced configuration· hFE matched· Continues to operate at VCE < 1 V.Application· Single balanced m...
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· Small size
· High power gain at low bias current and voltage
· Temperature matched
· Balanced configuration
· hFE matched
· Continues to operate at VCE < 1 V.

| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| Any single transistor | |||||
| VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
8 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
2.5 |
V |
| IC | DC collector current |
- |
18 |
mA | |
| Ptot | total power dissipation |
up to Ts = 118 °C; note 1 |
- |
500 |
mW |
| Tstg | storage temperature |
-65 |
+175 |
°C | |
| Tj | junction temperature |
- |
175 |
°C | |
Emitter coupled dual NPN silicon RF transistor BFE505 in a surface mount, 5-pin SOT353 (S-mini) package. The transistor is primarily intended for applications in the RF front end as a balanced mixer, a differential amplifier in analog and digital cellular phones, and in cordless phones, pagers and satellite TV-tuners.