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MFG:PHILIPS  Package Cooled:06+  D/C:SOT353  

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BFE Series Datasheet download

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Part Number: BFE520

 

MFG: PHILIPS

Package Cooled: 06+

D/C: SOT353

Description: Emitter coupled dual NPN silicon RF transistor in a surface mount 5-pin SOT353 (S-mini) package. The t...


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BFE520 General Description


Emitter coupled dual NPN silicon RF transistor in a surface mount 5-pin SOT353 (S-mini) package. The transistor is primarily intended for applications in the RF front end as a balanced mixer, a differential amplifier in analog and digital cellular phones, and in cordless phones, pagers and satellite TV-tuners.

BFE520 Maximum Ratings

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Any single transistor
VCBO collector-base voltage
open emitter
-
20
V
VCEO collector-emitter voltage
open base
-
8
V
VEBO emitter-base voltage
open collector
-
2.5
V
IC DC collector current
-
70
mA
Ptot total power dissipation
up to Ts = 118 °C; note 1
-
1
W
Tstg storage temperature
-65
+175
°C
Tj junction temperature
-
175
°C

BFE520 Features

· Small size
· High power gain at low bias current and voltage
· Temperature matched
· Balanced configuration
· hFE matched
· Continues to operate at VCE < 1 V.

BFE520 Typical Application

· Single balanced mixers
· Balanced amplifiers
· Balanced oscillators.

BFE520 Connection Diagram

BFE520  Connection Diagram

BFE520 datasheet

BFE520
PDF/DataSheet Download

Find BFE520 Suppliers

  • ·BFE505
  • PHILIPS [Philips Semiconductors] 
  • NPN wideband differential transistor 
  • 60612 KB
  • BFE505 Datasheet Download

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