Purchase BFG11W, In-stock BFG11W From SeekIC.
MFG:Philips D/C:06+
Part Number: BFG11W
MFG: Philips
D/C: 06+
Description: NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package.
- Table of contents:
BFG11W
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Suppliers
DataSheet
General Description
BFG11W General Description
NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package.
BFG11W Features
· High power gain
· High efficiency
· Small size discrete power amplifier
· 1.9 GHz operating area
· Gold metallization ensures excellent reliability
· Linear and non-linear operation.
· High efficiency
· Small size discrete power amplifier
· 1.9 GHz operating area
· Gold metallization ensures excellent reliability
· Linear and non-linear operation.
BFG11W Typical Application
· Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS.
· Driver for DCS 1800.
· Driver for DCS 1800.
BFG11W Connection Diagram
BFG11W
PDF/DataSheet Download
- Datasheet: BFG11W
- File Size: 100389 KB
- Manufacturer: PHILIPS [Philips Semiconductors]
- Click here to Download
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BFG11W Relative Products
BFG11/X
NPN silicon planar epitaxial transistors BFG11/X encapsulated in a plastic, 4-pin dual-emitter SOT143 package.
BFG11
The BFG11 is designed as NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. Its typical applications is common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.The BFG11has five features. ...
BFG10X
NPN silicon planar epitaxial transistor BFG10X encapsulated in a plastic, 4-pin dual-emitter SOT343 package.
BFG10W/X,115
TRANS NPN 10V 250MA SOT343N
BFG10W
NPN silicon planar epitaxial transistor BFG10W encapsulated in a plastic, 4-pin dual-emitter SOT343 package.
BFG10/X
NPN silicon planar epitaxial transistor BFG10/X encapsulated in plastic, 4-pin dual-emitter SOT143 package.
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