MFG:PHI Package Cooled:SOT-223 D/C:07+
MFG: PHI
Package Cooled: SOT-223
D/C: 07+
Description: NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier ...
NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.
The distribution of the active areas across the surface of the device gives an excellent temperature profile.
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
25 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
15 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
2 |
V |
| IC | collector current (DC) |
- |
150 |
mA | |
| Ptot | total power dissipation |
up to Ts = 145 °C (note 1) |
- |
1 |
mW |
| Tstg | storage temperature |
-65 |
150 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |
Note
1. Ts is the temperature at the soldering point of the collector tab.
BFG135
PDF/DataSheet Download
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