MFG:PHILIPS Package Cooled:06+ D/C:SOT143
MFG: PHILIPS
Package Cooled: 06+
D/C: SOT143
Description: The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primari...
The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems.
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
10 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
2.5 |
V |
| IC | collector current (DC) |
DC value, continuous |
- |
100 |
mA |
| Ptot | total power dissipation |
up to Ts = 75 °C; note 1 |
- |
350 |
mW |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
BFG197
PDF/DataSheet Download
NPN wideband transistor BFG17A in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding.BFG17Ais intended for use in wideband aerial amplifiers using SMD technology.
NPN transistor BFG16A mounted in a plastic SOT223 envelope.BFG16A is primarily intended for use in wideband amplifiers, aerial amplifiers and vertical amplifiers in high speed oscilloscopes.
SOT223-1.jpg)
TRANS NPN 150MA 15V 7GHZ SOT223
NPN silicon planar epitaxial transistor BFG135in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion ...
Price: 11.5-15.7 USD
highly-integrated microcontroller, 132-PQFP, 4.5 V to 5.5 V, 32-Bit, 16MHZ
Price: 0.78-1 USD
relay, DIP, 60 W, 3 A, High sensitivity, High breakdown voltage, Sealed construction, 2 Form C con...
Price: 0.001-5 USD
Switched Capacitor Voltage Converter, SOT-163, 20Ω Typical Output Impedance, Doubles Input Supply ...
Price: 0.85-1.13 USD
power PCB relay, DIP, G2R-2-12V/24V
Price: 4.76-6.35 USD
Intel Corporation, chip BGA, Intel 82801IBM I/O Controller, 2.5 W, 31mm x 31mm
Price: 0.1-0.5 USD
SMD thin-film fuse, 0.75A, 63V, SOP, Accurate current rating, 107%
Price: 1-85 USD
NPN silicon RF power transistor, 1400–1600 MHz, 25 Vdc, 250Watts, Motorola, Inc
Price: 3.42-3.85 USD
OKI semiconductor, TQFP, 4.6 V, 1 W, 50 mA, I2C-bus interface, Edge-adaptive 2D noise reduction
Price: 0.045-0.1 USD
P-Channel MOSFET, 12V, 4.3A, SOT-23, Surface Mount, 1.3W, Logic Level Gate
Price: 1.8-2 USD
dual source driver, ZIP, 35 V, 2.5 A, TDF1778, STMicroelectronics
Price: 190-230 USD
power GaAs FET, 15 V, 25.0 W, optimum power, 36.0dBm, 50Ω
Price: 0.5-0.77 USD
Extended Power, Design Flexible, EcoSmart, Integrated Off-line Switcher, TO-220
