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Part Number: BFG197/XR

 

 

 

 

Description: The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primari...


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BFG197/XR General Description


The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems.

BFG197/XR Maximum Ratings

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
20
V
VCEO collector-emitter voltage
open base
-
10
V
VEBO emitter-base voltage
open collector
-
2.5
V
IC collector current (DC)
DC value, continuous
-
100
mA
Ptot total power dissipation
up to Ts = 75 °C; note 1
-
350
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
175
°C

BFG197/XR Features

· High power gain
· Low noise figure
· Gold metallization ensures excellent reliability.

BFG197/XR Typical Application

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

BFG197/XR Connection Diagram

BFG197/XR Connection Diagram BFG197/XR Connection Diagram

BFG197/XR datasheet

BFG197/XR
PDF/DataSheet Download

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Related Part Number

BFG197/XR Relative Products

  • BFG197/X

    BFG197/X

    The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems.

  • BFG197

    BFG197

    The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems.

  • BFG196

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  • BFG193

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  • BFG17A

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    NPN wideband transistor BFG17A in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding.BFG17Ais intended for use in wideband aerial amplifiers using SMD technology.

  • BFG16A

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    NPN transistor BFG16A mounted in a plastic SOT223 envelope.BFG16A is primarily intended for use in wideband amplifiers, aerial amplifiers and vertical amplifiers in high speed oscilloscopes.

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