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Part Number: BFG21W
Description: NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applica...


Description: NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applica...
NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package.
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
15 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
4.5 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
1 |
V |
| IC | collector current (DC) |
- |
500 |
mA | |
| Ptot | total power dissipation |
Ts 60 °C; note 1 |
- |
600 |
mW |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| Tj | junction temperature |
- |
150 |
°C |
Note
1. Ts is the temperature at the soldering point of the emitter pins.
· Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc.
· Driver for DCS1800, 1900.
BFG21W
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