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MFG:PHILIPS  Package Cooled:SOT143  D/C:00+  

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BFG Series Datasheet download

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Part Number: BFG25A/X

 

MFG: PHILIPS

Package Cooled: SOT143

D/C: 00+

Description: NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter).

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BFG25A/X General Description


NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter).

BFG25A/X Maximum Ratings

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
8
V
VCEO collector-emitter voltage
open base
-
5
V
VEBO emitter-base voltage
open collector
-
2
V
IC collector current (DC)
-
6.5
mA
Ptot total power dissipation
Ts 165 °C; note 1
-
32
mW
Tstg storage temperature
-65
150
°C
Tj junction temperature
-
175
°C


Note
1. Ts is the temperature at the soldering point of the collector pin.

BFG25A/X Features

` Low current consumption (100 mA to 1 A)
` Low noise figure
` Gold metallization ensures excellent reliability.

BFG25A/X Typical Application

· RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz.

BFG25A/X Connection Diagram

BFG25A/X Connection Diagram

BFG25A/X datasheet

BFG25A/X
PDF/DataSheet Download

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Related Part Number

BFG25A/X Relative Products

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    NPN silicon wideband transistor BFG25A in a four-lead dual emitter SOT143B plastic package (cross emitter).

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  • BFG197/XR

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    The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems.

  • BFG197/X

    BFG197/X

    The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems.

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