Purchase BFG25AW, In-stock BFG25AW From SeekIC.
MFG:Philips D/C:06+
Part Number: BFG25AW
MFG: Philips
D/C: 06+
Description: NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.
- Table of contents:
BFG25AW
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Suppliers
DataSheet
General Description
BFG25AW General Description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.
BFG25AW Features
· Low current consumption (100 mA to 1 mA)
· Low noise figure
· Gold metallization ensures excellent reliability.
· Low noise figure
· Gold metallization ensures excellent reliability.
BFG25AW Typical Application
Wideband applications in UHF low power amplifiers, such as pocket telephones and paging systems.
BFG25AW Connection Diagram
BFG25AW
PDF/DataSheet Download
- Datasheet: BFG25AW
- File Size: 146515 KB
- Manufacturer: PHILIPS [Philips Semiconductors]
- Click here to Download
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BFG25AW Relative Products
BFG25A/X
NPN silicon wideband transistor BFG25A/Xin a four-lead dual emitter SOT143B plastic package (cross emitter).
BFG25A
NPN silicon wideband transistor BFG25A in a four-lead dual emitter SOT143B plastic package (cross emitter).
BFG21W,115
TRANS NPN 15V .5A 18GHZ SOT343R
BFG21W
NPN double polysilicon bipolar power transistor BFG21W with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package.
BFG198
NPN planar epitaxial transistor BFG198 in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.
BFG197/XR
The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems.
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