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Part Number: BFG310W
Description: NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.


Description: NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
15 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
6 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
2 |
V |
| IC | collector current (DC) |
- |
10 |
mA | |
| Ptot | total power dissipation |
Tsp 145 °C [1] |
- |
60 |
mW |
| Tstg | storage temperature |
-65 |
+175 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |
[1] Tsp is the temperature at the soldering point of the collector pin.
Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
` analog and digital cellular telephones
` cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
` radar detectors
` pagers
` Satellite Antenna TeleVision (SATV) tuners
BFG310W
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