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Part Number: BFG310XP

 

 

 

 

Description: NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.


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BFG310XP General Description


NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.

BFG310XP Maximum Ratings

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
15
V
VCEO collector-emitter voltage
open base
-
6
V
VEBO emitter-base voltage
open collector
-
2
V
IC collector current (DC)
-
10
mA
Ptot total power dissipation
Tsp   145 °C         [1]
-
60
mW
Tstg storage temperature
-65
+175
°C
Tj junction temperature
-
175
°C


[1] Tsp is the temperature at the soldering point of the collector pin.

BFG310XP Features

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability

BFG310XP Typical Application

 Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
   ` analog and digital cellular telephones
   ` cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
   ` radar detectors
   ` pagers
   ` Satellite Antenna TeleVision (SATV) tuners

BFG310XP Connection Diagram

BFG310XP Connection Diagram

BFG310XP datasheet

BFG10
PDF/DataSheet Download

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Related Part Number

BFG310XP Relative Products

  • BFG310W/XR,115

    BFG310W/XR,115

    TRANS NPN 6V 10MA 14GHZ SOT343R

  • BFG310W

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    NPN silicon planar epitaxial transistor BFG310W in a 4-pin dual-emitter SOT343R plastic package.

  • BFG310/XR,215

    BFG310/XR,215

    TRANS NPN 4.5V 18GHZ SOT143R

  • BFG31,115

    BFG31,115

    TRANS PNP 10V 5GHZ SOT223

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    PNP planar epitaxial transistor BFG31 mounted in a plastic SOT223 envelope.BFG31 is intended for wideband amplifier applications.NPN complement is the BFG97.

  • BFG25X

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    NPN silicon wideband transistor BFG25X in a four-lead dual emitter SOT143B plastic package (cross emitter).

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