MFG:N/A Package Cooled:NA/ D/C:09+
MFG: N/A
Package Cooled: NA/
D/C: 09+
Description: NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier ...
NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
25 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
18 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
2 |
V |
| IC | collector current (DC) |
- |
150 |
mA | |
| Ptot | total power dissipation |
up to Ts = 135 °C (note 1) |
- |
1 |
mW |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |
Note
1. Ts is the temperature at the soldering point of the collector tab.
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
BFG35
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