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BFG403W

Features: · Low current· Very high power gain· Low noise figure· High transition frequency· Very low feedback capacitance.Application· Pager front ends· RF front end· Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)· Radar detectors.PinoutSp...

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SeekIC No. : 004299657 Detail

BFG403W: Features: · Low current· Very high power gain· Low noise figure· High transition frequency· Very low feedback capacitance.Application· Pager front ends· RF front end· Wideband applications, e.g. ana...

BFG403W Data Sheet

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Part Number:
BFG403W
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low current
· Very high power gain
· Low noise figure
· High transition frequency
· Very low feedback capacitance.


Application

· Pager front ends
· RF front end
· Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)
· Radar detectors.




Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
10
V
VCEO collector-emitter voltage
open base
-
4.5
V
VEBO emitter-base voltage
open collector
-
1
V
IC collector current (DC)
-
3.6
mA
Ptot total power dissipation
Ts 140 °C; note 1; see Fig.2
-
16
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
150
°C



Description

NPN double polysilicon wideband transistor BFG403W with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.




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