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MFG:PHILIPS  Package Cooled:SOT143  D/C:05+/06+  

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BFG Series Datasheet download

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Part Number: BFG403W

 

MFG: PHILIPS

Package Cooled: SOT143

D/C: 05+/06+

Description: NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic...


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BFG403W General Description


NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.

BFG403W Maximum Ratings

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
10
V
VCEO collector-emitter voltage
open base
-
4.5
V
VEBO emitter-base voltage
open collector
-
1
V
IC collector current (DC)
-
3.6
mA
Ptot total power dissipation
Ts 140 °C; note 1; see Fig.2
-
16
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
150
°C

BFG403W Features

· Low current
· Very high power gain
· Low noise figure
· High transition frequency
· Very low feedback capacitance.

BFG403W Typical Application

· Pager front ends
· RF front end
· Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)
· Radar detectors.

BFG403W Connection Diagram

BFG403W Connection Diagram

BFG403W datasheet

BFG403W
PDF/DataSheet Download

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