BFG410W Selling Leads, Price trend, BFG410W DataSheet download, circuit diagram from SeekIC.com

Features: · Very high power gain· Low noise figure· High transition frequency· Emitter is thermal lead· Low feedback capacitance.Application· RF front end· Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)· Radar detectors· Pagers· Satellite ...

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SeekIC No. : 004299658 Detail

BFG410W: Features: · Very high power gain· Low noise figure· High transition frequency· Emitter is thermal lead· Low feedback capacitance.Application· RF front end· Wideband applications, e.g. analog and dig...

BFG410W Data Sheet

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Part Number:: BFG410W
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/27

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Product Details

Description

Features:

· Very high power gain
· Low noise figure
· High transition frequency
· Emitter is thermal lead
· Low feedback capacitance.

Application

· RF front end
· Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)
· Radar detectors
· Pagers
· Satellite television tuners (SATV)
· High frequency oscillators.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	10	V
V_CEO	collector-emitter voltage	open base	-	4.5	V
V_EBO	emitter-base voltage	open collector	-	1	V
I_C	collector current (DC)		-	12	mA
P_tot	total power dissipation	T_s 110 °C; note 1; see Fig.2	-	54	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	150	°C

Note
1. T_s is the temperature at the soldering point of the emitter pins.

Description

NPN double polysilicon wideband transistor BFG410W with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.

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BFG410W

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