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BFP540FESDE6327

TRANS RF NPN 4.5V 80MA TSFP-4

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SeekIC No. : 003435121 Detail

BFP540FESDE6327: TRANS RF NPN 4.5V 80MA TSFP-4

BFP540FESDE6327 Data Sheet

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Part Number:
BFP540FESDE6327
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Infineon Technologies
Transistor Type: NPN Typical Resistor Ratio : 1 at NPN, 4.7 at PNP
Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 20dB
Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Current - Collector (Ic) (Max): 80mA Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP    

Description

Series: -
Transistor Type: NPN
Mounting Type: Surface Mount
Power - Max: 250mW
Voltage - Collector Emitter Breakdown (Max): 5V
Current - Collector (Ic) (Max): 80mA
Gain: 20dB
Manufacturer: Infineon Technologies
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP


Parameters:

Technical/Catalog InformationBFP540FESDE6327
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Frequency - Transition30GHz
Noise Figure (dB Typ @ f)0.9dB ~ 1.4dB @ 1.8GHz
Current - Collector (Ic) (Max)80mA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 3.5V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)4.5V
Gain16dB
Power - Max250mW
Compression Point (P1dB)11dBm
Package / CaseTSFP-4
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BFP540FESDE6327
BFP540FESDE6327
BFP540FESDE6327INTR ND
BFP540FESDE6327INTRND
BFP540FESDE6327INTR



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