MFG:N/A Package Cooled:NA/ D/C:09+
MFG: N/A
Package Cooled: NA/
D/C: 09+
Description: NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. I...
NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is primarily intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers etc.
The transistor features very low intermodulation distortion and high power gain. Due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
15 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
3.3 |
V |
| IC | collector current |
- |
100 |
mA | |
| ICM | DC collector current |
f > 1 MHz |
- |
150 |
mA |
| Ptot | total power dissipation |
up to Ts = 145 °C note 1 |
- |
1 |
W |
| Tstg | storage temperature |
-65 |
150 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |
Note
1. Ts is the temperature at the soldering point of the collector tab.
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
BFQ19
PDF/DataSheet Download
SOT89.jpg)
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