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Part Number: BFQ34

 

 

 

 

Description: NPN transistor encapsulated in a 4 lead SOT122A envelope with a ceramic cap. All leads are isolated fr...


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BFQ34 General Description


NPN transistor encapsulated in a 4 lead SOT122A envelope with a ceramic cap. All leads are isolated from the stud.

It is primarily intended for driver and final stages in MATV system amplifiers. It is also suitable for use in low power band IV and V equipment. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. The device also features high output voltag capabilities.

BFQ34 Maximum Ratings

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
25
V
VCEO collector-emitter voltage
open base
-
18
V
VEBO emitter-base voltage
open collector
-
2
V
IC collector current
-
150
mA
Ptot total power dissipation
up to TC = 160 °C
-
2.7
W
Tstg storage temperature
-65
150
°C
Tj junction temperature
-
200
°C

BFQ34 Typical Application

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

BFQ34 Connection Diagram

BFQ34  Connection Diagram

BFQ34 datasheet

BFQ34
PDF/DataSheet Download

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BFQ34 Relative Products

  • BFQ31A

    BFQ31A

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    BFQ270

    Silicon NPN transistor BFQ270 mounted in a 4-lead dual-emitter SOT172A1. envelope with a ceramic cap. All leads are isolated from the mounting base.BFQ270 is primarily intended for use in MATV and CATV amplifiers.

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  • BFQ256A

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