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Part Number: BFR540

 

 

 

 

Description: The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend...


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BFR540 General Description


The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.),radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.

The transistor is encapsulated in a plastic SOT23 envelope.

BFR540 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage RBE =0 15 V
VEBO emitter-base voltage open collector 2.5 V
IC collector current (DC)   120 mA
Ptot total power dissipation  up to Ts =70 °C; note 1 500 mW
Tstg storage temperature   −65 150
Tj junction temperature   175

BFR540 Features

• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

BFR540 datasheet

BFR540
PDF/DataSheet Download

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