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BFR540

Features: • High power gain• Low noise figure• High transition frequency• Gold metallization ensures excellent reliability.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-em...

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SeekIC No. : 004299900 Detail

BFR540: Features: • High power gain• Low noise figure• High transition frequency• Gold metallization ensures excellent reliability.Specifications SYMBOL PARAMETER CONDITIONS ...

BFR540 Data Sheet

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Part Number:
BFR540
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 20 V
VCEO collector-emitter voltage RBE =0 − 15 V
VEBO emitter-base voltage open collector − 2.5 V
IC collector current (DC) − 120 mA
Ptot total power dissipation up to Ts =70 °C; note 1 − 500 mW
Tstg storage temperature −65 150
Tj junction temperature − 175





Description

The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.),radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.

The transistor BFR540 is encapsulated in a plastic SOT23 envelope.






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