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Part Number: BFR540
Description: The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend...


Description: The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend...
The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.),radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.
The transistor is encapsulated in a plastic SOT23 envelope.
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | − | 20 | V |
| VCEO | collector-emitter voltage | RBE =0 | − | 15 | V |
| VEBO | emitter-base voltage | open collector | − | 2.5 | V |
| IC | collector current (DC) | − | 120 | mA | |
| Ptot | total power dissipation | up to Ts =70 °C; note 1 | − | 500 | mW |
| Tstg | storage temperature | −65 | 150 | ||
| Tj | junction temperature | − | 175 |
BFR540
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