Features: · For low noise, low-power amplifiersin mobile communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m· fT = 7 GHz F = 1.5 dB at 900 MHz· Two (galvanic) internal isolated Transistors in one package Specifications PARAMETER SYMBOL VALUE UNIT ...
BFS480: Features: · For low noise, low-power amplifiersin mobile communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m· fT = 7 GHz F = 1.5 dB at 900 MHz· Two (galvanic) ...
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· For low noise, low-power amplifiersin mobile communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m
· fT = 7 GHz
F = 1.5 dB at 900 MHz
· Two (galvanic) internal isolated Transistors in one package
| PARAMETER | SYMBOL | VALUE | UNIT |
| Collector-Base Voltage | VCBO | 10 | V |
| Collector-Emitter Voltage | VCES | 10 | |
| Collector-Emitter Voltage | VCEO | 8 | |
| Emitter-Base Voltage | VEBO | 2 | |
| Base current | IB | 1.2 | mA |
| Collector current | IC | 10 | |
| Total power dissipation TS 112 °C 1) |
Ptot | 80 | mW |
| Junction temperature | Tj | 150 | |
| Ambient temperature | TA | -65 ... 150 | |
| Storage temperature | Tstg | -65 ... 150 | |
| Thermal Resistance | |||
| Junction - soldering point2) | RthJS | 470 | K/W |