Features: · For low-noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA· fT = 8 GHz F = 1.4 dB at 900 MHz· Two (galvanic) internal isolated Transistors in one packageSpecifications PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 20 V Collector...
BFS481: Features: · For low-noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA· fT = 8 GHz F = 1.4 dB at 900 MHz· Two (galvanic) internal isolated Transistors in one packageSpe...
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| PARAMETER | SYMBOL | VALUE | UNIT |
| Collector-Base Voltage | VCBO | 20 | V |
| Collector-Emitter Voltage | VCES | 20 | |
| Collector-Emitter Voltage | VCEO | 12 | |
| Emitter-Base Voltage | VEBO | 2 | |
| Base current | IB | 2 | mA |
| Collector current | IC | 20 | |
| Total power dissipation TS 83 °C 1) |
Ptot | 175 | mW |
| Junction temperature | Tj | 150 | |
| Ambient temperature | TA | -65 ... 150 | |
| Storage temperature | Tstg | -65 ... 150 | |
| Thermal Resistance | |||
| Junction - soldering point2) | RthJS | 380 | K/W |