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MFG:N/A  Package Cooled:NA/  D/C:09+  

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Part Number: BFS505

 

MFG: N/A

Package Cooled: NA/

D/C: 09+

Description: NPN transistor in a plastic SOT323 envelope.It is intended for low power amplifiers,oscillator...


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BFS505 General Description


NPN transistor in a plastic SOT323 envelope.

It is intended for low power amplifiers,oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones, pagers) up to 2 GHz.

BFS505 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage RBE =0 15 V
VEBO emitter-base voltage open collector 2.5 V
IC collector current (DC)   18 mA
Ptot total power dissipation up to Ts= 147 °C; note 1 150 mW
Tstg storage temperature   −65 150
Tj junction temperature   175

BFS505 Features

• Low current consumption
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability
• SOT323 envelope.

BFS505 datasheet

BFS505
PDF/DataSheet Download

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