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BFS540

Features: • High power gain• Low noise figure• High transition frequency• Gold metallization ensures excellent reliability• SOT323 envelope.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 ...

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BFS540: Features: • High power gain• Low noise figure• High transition frequency• Gold metallization ensures excellent reliability• SOT323 envelope.Specifications SYMBOL ...

BFS540 Data Sheet

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Part Number:
BFS540
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability
• SOT323 envelope.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 20 V
VCEO collector-emitter voltage RBE =0 − 15 V
VEBO emitter-base voltage open collector − 2.5 V
IC collector current (DC)   − 120 mA
Ptot total power dissipation up to Ts =80 °C; note 1 − 500 mW
Tstg storage temperature   −65 150
Tj junction temperature   − 175



Description

NPN transistor BFS540 in a plastic SOT323 envelope.

BFS540 is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz.




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