MFG:PHILIPS Package Cooled:SMD D/C:2008+
MFG: PHILIPS
Package Cooled: SMD
D/C: 2008+
Description: NPN transistor in a plastic SOT23 envelope.It is primarily intended for use in RF low power am...
NPN transistor in a plastic SOT23 envelope.
It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100 µA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | − | 8 | V |
| VCEO | collector-emitter voltage | open base | − | 5 | V |
| VEBO | emitter-base voltage | open collector | − | 2 | V |
| IC | collector current (DC) | − | 6.5 | mA | |
| ICM | peak collector current | f > 1 MHz | − | 10 | mA |
| Ptot | total power dissipation | up to Ts = 167 °C; note 1 | − | 30 | mW |
| Tstg | storage temperature | −65 | 150 | ||
| Tj | junction temperature | − | 175 |
Note
1. Ts is the temperature at the soldering point of the collector tab.
These products are not designed for use in life support appliances, devices, or systems where malfunction of these roducts can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
BFT25
PDF/DataSheet Download
The BFS67 features are as follows: `Low Noise Figure NF = 4.5 dB TYP. @VCE = 5 V, IC = 2 mA, f = 500 MHz`High Current-Gain-Bandwidth Product fT= 1 GHz TYP. @VCE = 5 V, IC = 2 mA, f = 500 MHz
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